Structural properties of transparent Ti-V oxide semiconductor thin films
| Autor: | Karolina Sieradzka, Danuta Kaczmarek, Jerzy Morgiel, B. Adamiak, Eugeniusz Prociow, Jaroslaw Domaradzki |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
magnetron sputtering structural investigation business.industry Physics QC1-999 Oxide General Physics and Astronomy Substrate (electronics) Sputter deposition Nanocrystalline material chemistry.chemical_compound chemistry Sputtering Transmission electron microscopy Phase (matter) vanadium transparent semiconductor Optoelectronics titanium oxide Thin film business |
| Zdroj: | Open Physics, Vol 11, Iss 2, Pp 251-257 (2013) |
| ISSN: | 2391-5471 |
| DOI: | 10.2478/s11534-012-0150-8 |
| Popis: | Transparent oxide semiconducting thin films based on mixed Ti-V oxides were prepared using a modified reactive magnetron sputtering method. Based on structural investigations performed with the help of x-ray diffraction and transmission electron microscopy analysis, two distinct regions in the prepared thin film have been observed: a nanocrystalline TiO2-V2O3-V2O5 mixed composition, and a thin layer consisting of amorphous phase and nanocystalline TiO2 phase deposited directly at the substrate. Optical measurements show excellent transmission in the visible spectral range of 73%, on average. Resistivity of the thin film was found at the order of 105 Ω cm at room temperature. The preparation of mixed Ti-V oxides provides a combination of high transparency and semiconducting properties. |
| Databáze: | OpenAIRE |
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