Reversible crystalline-to-amorphous phase transformation in monolayer MoS2 under grazing ion irradiation
| Autor: | Silvan Kretschmer, Boris V. Senkovskiy, Philipp Valerius, Arkady V. Krasheninnikov, Joshua Hall, Mahdi Ghorbani-Asl, Alexander Herman, Thomas Michely, Shilong Wu, Niels Ehlen, Alexander Grüneis |
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| Přispěvatelé: | University of Cologne, Helmholtz-Zentrum Dresden-Rossendorf, University of Duisburg-Essen, Department of Applied Physics, Aalto-yliopisto, Aalto University |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Ir(111) phase transformation 02 engineering and technology 01 natural sciences Transformation (music) law.invention Ion Molecular dynamics law 0103 physical sciences Monolayer 2D materilas General Materials Science Irradiation 010306 general physics defects irradiation Graphene Mechanical Engineering graphene ion irradiation General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Amorphous phase EVOLUTION molecular dynamics simulation Mechanics of Materials Chemical physics scanning tunneling microscopy Scanning tunneling microscope 0210 nano-technology MoS2 atomistic simulations TRANSITION |
| Zdroj: | 2D Materials 2D Materials 7(2020), 025005 |
| ISSN: | 2053-1583 0953-8984 1367-2630 0021-4922 |
| Popis: | openaire: EC/H2020/648589/EU//SUPER-2D By combining scanning tunneling microscopy, low-energy electron diffraction, photoluminescence and Raman spectroscopy experiments with molecular dynamics simulations, a comprehensive picture of the structural and electronic response of a monolayer of MoS 2 to 500 eV Xe + irradiation is obtained. The MoS 2 layer is epitaxially grown on graphene/Ir(1 1 1) and analyzed before and after irradiation in situ under ultra-high vacuum conditions. Through optimized irradiation conditions using low-energy ions with grazing trajectories, amorphization of the monolayer is induced already at low ion fluences of 1.5 × 10 14 ions cm -2 and without inducing damage underneath the MoS 2 layer. The crystalline-to-amorphous transformation is accompanied by changes in the electronic properties from semiconductor-to-metal and an extinction of photoluminescence. Upon thermal annealing, the re-crystallization occurs with restoration of the semiconducting properties, but residual defects prevent the recovery of photoluminescence. |
| Databáze: | OpenAIRE |
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