A Novel Confined Nitride-Trapping Layer Device for 3-D NAND Flash With Robust Retention Performances
| Autor: | Chung-Hao Fu, Chih-Yuan Lu, Keh-Chung Wang, Wei-Chen Chen, Guan-Ru Lee, Hang-Ting Lue, Chia-Jung Chiu, Tzu-Hsuan Hsu |
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| Rok vydání: | 2020 |
| Předmět: |
Arrhenius equation
010302 applied physics Materials science business.industry NAND gate Trapping Nitride 01 natural sciences Electronic Optical and Magnetic Materials symbols.namesake Stack (abstract data type) Flash (manufacturing) 0103 physical sciences Memory window symbols Optoelectronics Control sample Electrical and Electronic Engineering business Layer (electronics) Saturation (magnetic) |
| Zdroj: | IEEE Transactions on Electron Devices. 67:989-994 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | A novel confined nitride (SiN) charge trapping 3-D NAND flash with excellent postcycling retention performances was demonstrated. Using a uniform sidewall lateral recess in the 3-D stack followed by a SiN pull-back process to isolate the SiN trapping layer in a self-aligned way is critical to facilitate this structure. Lower erase saturation ${Z}$ -direction. Therefore, this structure is in favor of the larger memory window (>10 V) design. Random telegraph noise (RTN) characteristics are comparable to the traditional 3-D NAND device with 100 years at 60 °C and even longer at room temperature. Moreover, superior post-1K-cycled multilevel cell (MLC) retention was also illustrated, which even sustains 150 °C and one-week baking. Therefore, the device has the potential to meet the low-cost long-retention archive memory applications. |
| Databáze: | OpenAIRE |
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