Graded Carrier Concentration Absorber Profile for High Efficiency CIGS Solar Cells
| Autor: | Giovanni Cipriani, Riccardo Pernice, Vincenzo La Rocca, Giuseppe Ricco Galluzzo, Antonino Parisi, Vincenzo Di Dio, Luciano Curcio, Salvatore Stivala, Alessandro Busacca, Rosario Miceli, Alfonso Carmelo Cino |
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| Přispěvatelé: | Parisi, A, Pernice, R, Rocca, V, Curcio, L, Stivala, S, Cino, A C, Cipriani, G, Di Dio, V, Ricco Galluzzo, G, Miceli, R, Busacca, A |
| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: |
Materials science
Article Subject Band gap lcsh:TJ807-830 lcsh:Renewable energy sources chemistry.chemical_element Settore ING-IND/32 - Convertitori Macchine E Azionamenti Elettrici Settore ING-INF/01 - Elettronica THIN-FILMS Optics General Materials Science CU(IN GA)SE-2 Renewable Energy Sustainability and the Environment business.industry Open-circuit voltage Doping Settore ING-INF/02 - Campi Elettromagnetici General Chemistry Copper indium gallium selenide solar cells Atomic and Molecular Physics and Optics chemistry LAYER Molybdenum Optoelectronics business Photovoltaic Short circuit Layer (electronics) |
| Zdroj: | International Journal of Photoenergy, Vol 2015 (2015) |
| Popis: | We demonstrate an innovative CIGS-based solar cells model with a graded doping concentration absorber profile, capable of achieving high efficiency values. In detail, we start with an in-depth discussion concerning the parametrical study of conventional CIGS solar cells structures. We have used the wxAMPS software in order to numerically simulate cell electrical behaviour. By means of simulations, we have studied the variation of relevant physical and chemical parameters-characteristic of such devices-with changing energy gap and doping density of the absorber layer. Our results show that, in uniform CIGS cell, the efficiency, the open circuit voltage, and short circuit current heavily depend on CIGS band gap. Our numerical analysis highlights that the band gap value of 1.40 eV is optimal, but both the presence of Molybdenum back contact and the high carrier recombination near the junction noticeably reduce the crucial electrical parameters. For the above-mentioned reasons, we have demonstrated that the efficiency obtained by conventional CIGS cells is lower if compared to the values reached by our proposed graded carrier concentration profile structures (up to 21%). © 2015 Antonino Parisi et al. |
| Databáze: | OpenAIRE |
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