Quantum Mechanical Capacitance in a Scanning Tunneling Microscope

Autor: Botkin, D., Weiss, S., Ogletree, D.F., Salmeron, E.M., Chemla, D.S.
Rok vydání: 1995
Zdroj: Botkin, D.; Weiss, S.; Ogletree, D.F.; Salmeron, E.M.; & Chemla, D.S.(1995). Quantum Mechanical Capacitance in a Scanning Tunneling Microscope. Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/0tj0p6k7
DOI: 10.1364/qo.1995.qwa3
Popis: One of the most spectacular manifestations of quantum mechanics is tunneling between closely spaced conductors. The DC I-V characteristics in different types of tunnel junctions, such as metal-vacuum-metal junctions (MVM), metal-insulator-metal junctions (MIM), Josephson junctions, and quantum point contacts in a two dimensional electron gas, are well understood. High frequency transport in these systems is much less understood, and has been the subject of intense research in recent years[1,2].
Databáze: OpenAIRE