Sputtering pressure influenced structural, electrical and optical properties of RF magnetron sputtered MoO3 films
| Autor: | S. Uthanna, S. Subbarayudu, K. Venkata Subba Reddy |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
structural properties
optical properties Materials science business.industry Mechanical Engineering 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences moo3 thin films 0104 chemical sciences Nanomaterials Mechanics of Materials Sputtering Cavity magnetron TA401-492 sputtering pressure Optoelectronics General Materials Science rf magnetron sputtering 0210 nano-technology business Materials of engineering and construction. Mechanics of materials |
| Zdroj: | Materials Science-Poland, Vol 38, Iss 1, Pp 41-47 (2020) |
| ISSN: | 2083-134X |
| DOI: | 10.2478/msp-2020-0001 |
| Popis: | MoO3 films were deposited by RF magnetron sputtering technique on glass and silicon substrates held at 473 K by sputtering of metallic molybdenum target at an oxygen partial pressure of 4 × 10−2 Pa and at different sputtering pressures in the range of 2 Pa to 6 Pa. The influence of sputtering pressure on the structure and surface morphology, electrical and optical properties of the MoO3 thin films was studied. X-ray diffraction studies suggest that the films deposited at a sputtering pressure of 2 Pa were polycrystalline in nature with mixed phase of α- and β-phase MoO3, while those formed at sputtering pressure of 4 Pa and above were of α-phase MoO3. Scanning electron micrographs showed a decrement in the size of the particles and their shapes changed from needle like structure to dense films with the increase of sputtering pressure. Fourier transform infrared spectroscopic studies confirmed the presence of characteristic vibration modes of Mo=O, Mo–O and Mo–O–Mo related to MoO3. Electrical resistivity of the MoO3 films decreased from 6.0 × 104 Ω cm to 2 × 104 Ω cm with an increase of sputtering pressure from 2 Pa to 6 Pa, respectively. Optical band gap of the films decreased from 3.12 eV to 2.86 eV with the increase of sputtering pressure from 2 Pa to 6 Pa, respectively. |
| Databáze: | OpenAIRE |
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