| Autor: |
Davide Colucci, Marina Baryshnikova, Yuting Shi, Yves Mols, Muhammad Muneeb, Yannick De Koninck, Didit Yudistira, Marianna Pantouvaki, Joris Van Campenhout, Robert Langer, Dries Van Thourhout, Bernardette Kunert |
| Rok vydání: |
2022 |
| Předmět: |
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| Zdroj: |
OPTICS EXPRESS |
| ISSN: |
1094-4087 |
| Popis: |
We introduce a new design space for optimizing III-V devices monolithically grown on Silicon substrates by extending the concept of nano-ridge engineering from binary semiconductors such as GaAs, InAs and GaSb to the ternary alloy InGaAs. This allows controlling the fundamental lattice constant of the fully relaxed ternary nano-ridge which thereby serves as a tunable base for the integration of diverse device hetero-layers. To demonstrate the flexibility of this approach, we realized an O-band nano-ridge laser containing three In0.45Ga0.55As quantum wells, which are pseudomorphically strained to an In0.25Ga0.75As nano-ridge base. The demonstration of an optically pumped nano-ridge laser operating around 1300 nm underlines the potential of this cost-efficient and highly scalable integration approach for silicon photonics. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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