GaSb-based laser monolithically grown on Si substrate operating under cw at room temperature

Autor:	Laurent Cerutti, J.R. Reboul, K. Madiomanana, Jean-Baptiste Rodriguez, Eric Tournié
Předmět:	Materials science Si substrate Silicon chemistry business.industry Wavelength range law Optoelectronics chemistry.chemical_element Direct integration of a beam business Laser law.invention
Zdroj:	Scopus-Elsevier
Popis:	GaSb-based devices allow covering the whole near- to mid-IR wavelength range. We will present our results in developing 1.55 µm lasers and their direct integration onto Si substrates.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::62fc573029c941bbb67c624d79721d7b http://www.scopus.com/inward/record.url?eid=2-s2.0-84890464326&partnerID=MN8TOARS Zobrazit plný text záznamu