Few-Layer MoS 2 /a-Si:H Heterojunction Pin-Photodiodes for Extended Infrared Detection
Autor: | Yilmaz Sakalli, Chanyoung Yim, Daniel Schneider, Niall McEvoy, Olof Engström, Satender Kataria, Paul Kienitz, Peter Haring Bolívar, Stefan Wagner, Julian M. Müller, Benjamin Butz, Andreas Bablich, Max C. Lemme, Georg S. Duesberg |
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Rok vydání: | 2019 |
Předmět: |
Amorphous silicon
Materials science Silicon FOS: Physical sciences Photodetector chemistry.chemical_element Applied Physics (physics.app-ph) 02 engineering and technology Chemical vapor deposition 7. Clean energy 01 natural sciences law.invention 010309 optics chemistry.chemical_compound Responsivity law Mesoscale and Nanoscale Physics (cond-mat.mes-hall) 0103 physical sciences Electrical and Electronic Engineering Molybdenum disulfide Condensed Matter - Mesoscale and Nanoscale Physics business.industry Heterojunction Physics - Applied Physics 021001 nanoscience & nanotechnology Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Photodiode chemistry Optoelectronics 0210 nano-technology business Biotechnology |
Zdroj: | ACS Photonics |
ISSN: | 2330-4022 |
DOI: | 10.1021/acsphotonics.9b00337 |
Popis: | Few-layer molybdenum disulfide (FL-MoS$_2$) films have been integrated into amorphous silicon (a-Si:H) pin photodetectors. To achieve this, vertical a-Si:H photodiodes were grown by plasma-enhanced chemical vapor deposition (PE-CVD) on top of large-scale synthesized and transferred homogeneous FL-MoS$_2$. This novel detector array exhibits long-term stability (more than six month) and outperforms conventional silicon-based pin photodetectors in the infrared range (IR, $\lambda$ = 2120 nm) in terms of sensitivities by up to 50 mAW$^{-1}$. Photodetectivities of up to 2 x 10$^{10}$ Jones and external quantum efficiencies of 3 % are achieved. The detectors further feature the additional functionality of bias-dependent responsivity switching between the different spectral ranges. The realization of such scalable detector arrays is an essential step towards pixelated and wavelength-selective sensors operating in the IR spectral range. |
Databáze: | OpenAIRE |
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