DC Performance of High-Quantum-Efficiency 1.3-$\mu \hbox{m}$ GaNAsSb/GaAs Waveguide Photodetector
| Autor: | Satrio Wicaksono, Kian Hua Tan, D Decoster, J. Chazelas, Malek Zegaoui, Christiane Legrand, Zhilin Xu, S.F. Yoon, Wan Khai Loke, N Saadsaoud |
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| Přispěvatelé: | Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF) |
| Rok vydání: | 2010 |
| Předmět: |
Materials science
Responsivity Photodetector 02 engineering and technology 7. Clean energy 01 natural sciences Gallium arsenide [SPI]Engineering Sciences [physics] chemistry.chemical_compound Optics Dilute nitride 0103 physical sciences Breakdown voltage Electrical and Electronic Engineering 010302 applied physics Photocurrent business.industry Photoconductivity 021001 nanoscience & nanotechnology Cladding (fiber optics) Electronic Optical and Magnetic Materials GaNAsSb chemistry Waveguide photodetector (WGPD) Optoelectronics Quantum efficiency 0210 nano-technology business |
| Zdroj: | IEEE Electron Device Letters IEEE Electron Device Letters, 2010, 31 (5), pp.449-451. ⟨10.1109/LED.2010.2041742⟩ IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2010, 31, pp.449-451. ⟨10.1109/LED.2010.2041742⟩ |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2010.2041742 |
| Popis: | We present the dc performance of a high-quantum-efficiency GaNAsSb/GaAs p-i-n waveguide photodetector. GaNAsSb with N and Sb contents of 3.3% and 8%, respectively, is sandwiched by AlGaAs/GaAs cladding layers. Two types of device epilayer structures, i.e., with and without AlGaAs cladding layer, show high responsivity values of 0.72 and 0.55 A/W, respectively, at a reverse bias voltage of 10 V and a wavelength of 1.3 $\mu\hbox{m}$. These correspond to internal quantum efficiencies of 96.7% and 73.9%, respectively. A linear increase in photocurrent with an increase in optical power up to 8 mW and also a high reverse breakdown voltage of $-$16.6 V were obtained. |
| Databáze: | OpenAIRE |
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