Interface trap density estimation in FinFETs from the subthreshold current
| Autor: | B. Kaleli, Raymond J. E. Hueting, N. van den Berg, P. Kuipers, Sander M. Smits, Jurriaan Schmitz |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Work (thermodynamics)
Accuracy and precision Materials science FinFETs Interface (computing) Transconductance Current Complementary MOSFETs (CMOSFETs) 02 engineering and technology Hardware_PERFORMANCEANDRELIABILITY 01 natural sciences Trap (computing) 0103 physical sciences Electronic engineering Hardware_INTEGRATEDCIRCUITS Traps 010302 applied physics Subthreshold conduction business.industry Interface states 021001 nanoscience & nanotechnology Optoelectronics Current (fluid) 0210 nano-technology business MOS devices Energy (signal processing) |
| Zdroj: | 2016 International Conference on Microelectronic Test Structures (ICMTS), 164-167 STARTPAGE=164;ENDPAGE=167;TITLE=2016 International Conference on Microelectronic Test Structures (ICMTS) |
| ISSN: | 1071-9032 |
| DOI: | 10.1109/icmts.2016.7476199 |
| Popis: | In this work we present a measurement approach to determine the interface trap density in FinFETs as a function of their energy. It is based on the precise determination of the gate voltage dependent ideality factor of the subthreshold current in this device. The required measurement accuracy for temperature, drain current and transconductance is derived, and we propose an implementation for wafer-level device measurement on contemporary test set-ups. Exemplary interface trap distributions are shown as obtained from two FinFET device technologies, featuring the commonly observed bathtub shape. |
| Databáze: | OpenAIRE |
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