| Autor: |
Matthieu Gilbert, Liesbeth Witters, Jay Mody, T. Y. Hoffmann, P. Schatzer, S Kolling, Malgorzata Jurczak, Nadine Collaert, Wilfried Vandervorst, Pierre Eyben, Thomas Chiarella, Naoto Horiguchi, Andreas Schulze, Ajay Kumar Kambham, G. Zschatzsch |
| Předmět: |
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| Zdroj: |
ResearcherID |
| Popis: |
Atom probe tomography (APT) in conjunction with scanning spreading resistance microscopy (SSRM) is demonstrated for the first time to profile dopant and carrier distributions in FinFET-based devices with sub-nanometer resolution. These two techniques together provide information on the degree of conformality, the dose retention and the dopant activation. These results are also compared with a methodology involving secondary ion mass spectrometry (SIMS). Ion implantation for increased conformality of source/drain extensions is demonstrated for tilted implants, which clearly leads to improved device performance. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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