| Autor: |
Tatsuya Takagi, Yasushi Takano, Shunro Fuke, Yuuki Matsuo |
| Jazyk: |
angličtina |
| Rok vydání: |
2010 |
| Předmět: |
|
| Zdroj: |
Japanese Journal of Applied Physics. 49(3):035502-035502-5 |
| ISSN: |
0021-4922 |
| Popis: |
GaP surface evolution on Si substrates in the initial growth stage was investigated using atomic force microscopy. The GaP was grown on 4°-misoriented Si substrates at 700–830 °C using metalorganic vapor phase epitaxy. Island growth was predominant below nominal 5 nm thickness at 830 °C. Several antiphase domains (APDs) grew to be 100 nm or longer at nominal 5 nm deposition. They were 5 nm higher than surrounding islands. The surrounding islands formed a layer at a nominal thickness over 5 nm. The layer grew vertically faster than the APDs. Several APDs grew laterally until a layer-thickness exceeded an APD height. The layer finally embedded the APDs. Self-annihilation of APDs was achieved below 40 nm thickness. Similar surface evolution was found at 770 and 800 °C. The APD size decreased with decreasing temperature. Self-annihilation of APDs was achieved below 20 nm thickness at 770 °C. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
