Transfer-Free CVD Growth of High-Quality Wafer-Scale Graphene at 300 °C for Device Mass Fabrication
| Autor: | Fengsong Qian, Jun Deng, Yibo Dong, Chen Xu, Liangchen Hu, Guosheng Fu, Pengying Chang, Yiyang Xie, Jie Sun |
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| Rok vydání: | 2022 |
| Předmět: | |
| Zdroj: | ACS Applied Materials & Interfaces. 14:53174-53182 |
| ISSN: | 1944-8252 1944-8244 |
| DOI: | 10.1021/acsami.2c16505 |
| Popis: | Direct chemical vapor deposition of graphene on semiconductors and insulators provides high feasibility for integration of graphene devices and semiconductor electronics. However, the current methods typically rely on high temperatures (1000 °C), which can damage the substrates. Here, a growth method for high-quality large-area graphene at 300 °C is introduced. A multizone furnace with gradient temperature control was designed according to a computational fluid dynamics model. The crucial roles of the chamber pressure in the film continuity and hydrogen composition in the graphene defect density at low temperature were revealed. As a result, a uniform graphene film with the Raman ratio |
| Databáze: | OpenAIRE |
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