Deoxyribonucleic Acid‐Based Electron Selective Contact for Crystalline Silicon Solar Cells

Autor: Thomas Tom, Eloi Ros, David Rovira, Julian López‐Vidrier, José Miguel Asensi, Pablo Ortega, Joaquim Puigdollers, Cristobal Voz, Joan Bertomeu
Přispěvatelé: Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica, Universitat Politècnica de Catalunya. MNT-Solar - Grup de Micro i Nano Tecnologies per Energia Solar
Rok vydání: 2022
Předmět:
Zdroj: Advanced Materials Technologies. 8:2200936
ISSN: 2365-709X
DOI: 10.1002/admt.202200936
Popis: This is the peer reviewed version of the following article: Tom, T. [et al.]. Deoxyribonucleic acid-based electron selective contact for crystalline silicon solar cells. "Advanced materials technologies (Weinheim)" [en línia], 10 Febrer 2023, [Consulta: 12 Desembre 2022]. Disponible a: http://hdl.handle.net/2117/377832, which has been published in final form at https://onlinelibrary.wiley.com/doi/10.1002/admt.202200936. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited. Development of carrier selective contacts for crystalline silicon solar cells has been recently of great interest toward the further expansion of silicon photovoltaics. The use of new electron and hole selective layers has opened an array of possibilities due to the low-cost processing and non-doping contacts. Here, a non-doped heterojunction silicon solar cell without the use of any intrinsic amorphous silicon is fabricated using Deoxyribonucleic acid (DNA) as the electron transport layer (ETL) and transition metal oxide V2O5 as the hole transport layer (HTL). The deposition and characterization of the DNA films on crystalline silicon have been studied, the films have shown a n-type behavior with a work function of 3.42 eV and a contact resistance of 28 mO cm2. This non-doped architecture has demonstrated a power conversion efficiency of 15.6%, which supposes an increase of more than 9% with respect to the cell not containing the biomolecule, thus paving the way for a future role of nucleic acids as ETLs. T.T. and E.R. shared co-first authorship. This research was supported by Spanish government through grants PID2019-109215RB-C41, PID2019-109215RB-C43, and PID2020-116719RB-C41 funded by MCIN/ AEI/10.13039/501100011033. One of the authors (T.T.) acknowledges the support of the Secretaria d’Universitats i Recerca de la Generalitat de Catalunya and European Social Fund (2019 FI_B 00456). Besides this, the authors thank technical staff from Barcelona Research Center in Multiscale Science and Engineering from Universitat Politècnica de Catalunya for its expertise and helpful discussions over XPS results, Dr. Oriol Arteaga Barriel from Universitat de Barcelona for the thickness measurements, and also Guillaume Sauthier from Catalan Institute of Nanoscience and Nanotechnology for his contribution through UPS measurements and discussions.
Databáze: OpenAIRE
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