Resistive Switching in Semimetallic SrIrO3 Thin Films

Autor: Borislav Vasić, Lluís Balcells, Benjamín Martínez, Alberto Pomar, Zorica Konstantinović, Víctor Fuentes
Přispěvatelé: Ministerio de Ciencia, Innovación y Universidades (España), European Commission, Ministry of Education, Science and Technological Development (Serbia)
Rok vydání: 2019
Předmět:
Zdroj: ACS Applied Electronic Materials
Digital.CSIC. Repositorio Institucional del CSIC
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ISSN: 2637-6113
Popis: Local electrical properties, measured by conductive atomic force microscopy, of semimetallic SrIrO3 thin films are reported. The appearance of an Anderson-type metal–insulator transition (MIT) triggered by disorder and spatial localization due to film thickness reduction is analyzed as well as their influence on the resistive switching behavior. For thin enough films (below ∼3 nm) samples are insulating with hysteretic I–V curves indicative of reversible resistive switching behavior between two states of clearly different resistance at room temperature. A sharp transition into a low resistance state (LRS), i.e., an abrupt increase of the current intensity, is detected above a well-defined threshold voltage indicative of localization of charge carriers. On the other hand, thicker samples exhibit a semimetallic character, and I–V curves show progressive changes of the local resistance without a clearly defined threshold voltage, thus evidencing the absence of a MIT transition with a well-defined resistance jump between the different resistance states.
We acknowledge financial support from the Spanish Ministry of Science, Innovation and Universities through Severo Ochoa Program (SEV-2015-04969), MAT2015-71664-R (HETEROCS), and RTI2018-099960-B-I00 (SPINCURIOX) and funding from the European Union’s Horizon 2020 research and innovation program under the Marie Sklodowska-Curie grant agreement no. 645658 (DAFNEOX Project) and FEDER Program. B.V. and Z.K. acknowledge the support of the Serbian Ministry of Education, Science and Technological Development (projects OI171005 and III45018).
Databáze: OpenAIRE