16 MeV-electron-induced defects in iron-doped indium phosphide
Autor: | M. Kamta, C. Schwab, J.-P. Engel, S. Domngang |
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Přispěvatelé: | Institut de Recherches Subatomiques (IReS), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Cancéropôle du Grand Est-Université Louis Pasteur - Strasbourg I-Centre National de la Recherche Scientifique (CNRS), Heyd, Yvette |
Jazyk: | angličtina |
Rok vydání: | 1998 |
Předmět: | |
Zdroj: | Journal of Applied Physics Journal of Applied Physics, American Institute of Physics, 1998, 84, pp.4273-4280 |
ISSN: | 0021-8979 1089-7550 |
Popis: | Diverse experimental approaches such as microwave saturation, photoexcitation, and phototransients, in combination with powerful multiparameter data analysis, have enabled us to unravel several intertwinning spectra of paramagnetic defects in 16 MeV-electron-irradiated semi-insulating InP:Fe, aimed at simulating ion implantation damage in this III-V substrate material. Some spectra have already been reported and identified in as-grown or electron-irradiated samples, such as the cubic FeIn and trigonal FeIn-Ini,In centers or in fast-neutron-irradiated samples, such as the tetragonal FeIn-Ini,P pair. Two of the new centers discovered have symmetries closely related to those of the former trigonal and tetragonal pairs, suggesting that they derive from the same defects, but in an environment modified by the particle-induced lattice damage. In this regard, it is noteworthy that these centers indeed show anisotropy effects that can be traced to the geometrical configuration of the electron irradiation. Surprisi... |
Databáze: | OpenAIRE |
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