Photodetector with Controlled Relocation of Carrier Density Peaks: Concept and Numerical Simulation
| Autor: | E. A. Ryndin, I. V. Pisarenko |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
lcsh:Applied optics. Photonics
Materials science Physics::Optics Photodetector 02 engineering and technology Integrated circuit high-speed aiiibv optoelectronic devices 01 natural sciences schrodinger-poisson equation system law.invention 010309 optics law 0103 physical sciences Radiology Nuclear Medicine and imaging Electronics on-chip optical interconnections Instrumentation Photocurrent Interconnection combined numerical model business.industry Transistor lcsh:TA1501-1820 Heterojunction 021001 nanoscience & nanotechnology Atomic and Molecular Physics and Optics Optical modulator Optoelectronics photodetector with controlled relocation of carrier density peaks 0210 nano-technology business |
| Zdroj: | Photonics, Vol 7, Iss 1, p 21 (2020) Photonics Volume 7 Issue 1 |
| ISSN: | 2304-6732 |
| Popis: | Modern electronics faces the degradation of metal interconnection performance in integrated circuits with nanoscale feature dimensions of transistors. The application of constructively and technologically integrated optical links instead of metal wires is a promising way of the problem solution. Previously, we proposed the advanced design of an on-chip injection laser with an AIIIBV nanoheterostructure, and a functionally integrated optical modulator. To implement the efficient laser-modulator-based optical interconnections, technologically compatible photodetectors with subpicosecond response time and sufficient sensitivity are required. In this paper, we introduce the concept of a novel high-speed photodetector with controlled relocation of carrier density peaks. The device includes a traditional p-i-n photosensitive junction and an orthogonally oriented control heterostructure. The transverse electric field displaces the peaks of electron and hole densities into the regions with low carrier mobilities and lifetimes during the back edge of an optical pulse. This relocation results in the fast decline of photocurrent that does not depend on the longitudinal transport of electrons and holes. We develop a combined numerical model based on the Schrodinger-Poisson equation system to estimate the response time of the photodetector. According to the simulation results, the steep part of the photocurrent back edge has a duration of about 0.1 ps. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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