Gunn domain existence in the channel of a saturated GaAs MESFET

Autor:	P. Bonjour, J.-P. Courat, R.C. Castagne
Rok vydání:	1978
Předmět:	leakage current Materials science semiconductor device accumulation bump channel drain characteristics 02 engineering and technology 01 natural sciences numerical bidimensional simulation Gallium arsenide modelling chemistry.chemical_compound semiconductor device models interfacial space charge layer 0103 physical sciences 0202 electrical engineering electronic engineering information engineering GaAs MESFET 010302 applied physics leakage currents business.industry Schottky gate field effect transistors 020208 electrical & electronic engineering Semiconductor device Space charge gallium arsenide Gunn effect chemistry Gunn domain [PHYS.HIST]Physics [physics]/Physics archives III V semiconductors Domain (ring theory) Optoelectronics space charge MESFET business Gunn diode Communication channel
Zdroj:	Revue de Physique Appliquée Revue de Physique Appliquée, Société française de physique / EDP, 1978, 13 (12), pp.651-654. ⟨10.1051/rphysap:019780013012065100⟩
ISSN:	0035-1687 2777-3671
DOI:	10.1051/rphysap:019780013012065100
Popis:	The existence of a Gunn domain in the channel of a GaAs MESFET after saturation is confirmed through numerical bidimensional simulation, but the i D vs. VDS decrease is not observed. It is shown that in devices including an interfacial space charge layer, the accumulation bump of the domain is responsible for an opening of the channel by which the leakage current is flowing.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::61cae44b1d414a4f8d8dfa4e223b3a20 https://doi.org/10.1051/rphysap:019780013012065100 Zobrazit plný text záznamu