Self-Aligned Formation of Sub 1 nm Gaps Utilizing Electromigration during Metal Deposition

Autor:	Tatsuhiko Ohata, Dong F. Wang, Ryuji Matsushita, Masakazu Mukaida, Masayo Horikawa, Manabu Kiguchi, Makiko Oyama, Kazuhito Tsukagoshi, Eri Okawa, Takao Ishida, Yasuhisa Naitoh
Rok vydání:	2013
Předmět:	Fabrication Materials science business.industry Molecular scale electronics Nanotechnology Biasing Electromigration symbols.namesake Electrode symbols Optoelectronics General Materials Science Electronics business Raman scattering Voltage
Zdroj:	ACS Applied Materials & Interfaces. 5:12869-12875
ISSN:	1944-8252 1944-8244
DOI:	10.1021/am403115m
Popis:	We developed a procedure for the fabrication of sub 1 nm gap Au electrodes via electromigration. Self-aligned nanogap formation was achieved by applying a bias voltage, which causes electromigration during metal evaporation. We also demonstrated the application of this method for the formation of nanogaps as small as 1 nm in width, and we found that the gap size can be controlled by changing the magnitude of the applied voltage. On the basis of the electric conductance and surface-enhanced Raman scattering (SERS) measurements, the fabricated gap size was estimated to be nearly equal to the molecular length of 1,4-benzenedithiol (BDT). Compared with existing electromigration methods, the new method provides two advantages: the process currents are clearly suppressed and parallel or large area production is possible. This simple method for the fabrication of a sub 1 nm gap electrode is useful for single-molecule-sized electronics and opens the door to future research on integrated sub 1 nm sized nanogap devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::61b034362a7165bb187a8f0cec96a462 https://doi.org/10.1021/am403115m Zobrazit plný text záznamu