Investigation of Terahertz 3D EM Simulation on Device Modeling and A New InP HBT Dispersive Inter-Electrode Impedance Extraction Method
| Autor: | Yan Sun, Yong Zhang, Ruimin Xu, Fei Xiao, Haiyan Lu, Yuehang Xu, Wei Cheng, Yapei Chen |
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| Rok vydání: | 2018 |
| Předmět: |
Electromagnetic field
Materials science General Computer Science Discretization Field (physics) Terahertz radiation Heterojunction bipolar transistor 02 engineering and technology 01 natural sciences chemistry.chemical_compound terahertz band 0103 physical sciences 0202 electrical engineering electronic engineering information engineering InP HBT General Materials Science transistor model Electrical impedance 010302 applied physics 3D EM simulation business.industry General Engineering 020206 networking & telecommunications chemistry Indium phosphide Optoelectronics Equivalent circuit lcsh:Electrical engineering. Electronics. Nuclear engineering business lcsh:TK1-9971 |
| Zdroj: | IEEE Access, Vol 6, Pp 45772-45781 (2018) |
| ISSN: | 2169-3536 |
| DOI: | 10.1109/access.2018.2865929 |
| Popis: | In this paper, a new 3-D electromagnetic (EM) simulation approach for heterojunction bipolar transistor (HBT) parameter extraction in terahertz band is presented. We introduce an inter-electrode impedance equivalent-circuit model with the concept of dispersive parameters and a more rigorous 3-D EM simulation parameter extraction method to avoid serious discrepancies between the simulated EM field distribution and the real EM field distribution of the device. Terahertz parasitic effects, including the EM field discretization and multi-finger device field sharing, are observed. Compared with the previous 3-D EM simulation-assisted model, the new model in this paper demonstrates better results for multi-finger indium phosphide HBTs. |
| Databáze: | OpenAIRE |
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