Reliable Memristive Switching Memory Devices Enabled by Densely Packed Silver Nanocone Arrays as Electric-Field Concentrators
| Autor: | Youngsoo Shin, Kyounghoon Yang, Daniel J. Joe, Byoung Kuk You, Yeon Sik Jung, Keon Jae Lee, Jong Min Kim |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
General Engineering General Physics and Astronomy Nanotechnology 02 engineering and technology Memristor 010402 general chemistry 021001 nanoscience & nanotechnology Electrochemistry Concentrator 01 natural sciences 0104 chemical sciences law.invention Non-volatile memory chemistry.chemical_compound Nanomesh chemistry law Electric field General Materials Science 0210 nano-technology Electrical conductor Nanoscopic scale |
| Zdroj: | ACS Nano. 10:9478-9488 |
| ISSN: | 1936-086X 1936-0851 |
| Popis: | Memristor devices based on electrochemical metallization operate through electrochemical formation/dissolution of nanoscale metallic filaments, and they are considered a promising future nonvolatile memory because of their outstanding characteristics over conventional charge-based memories. However, nanoscale conductive paths or filaments precipitated from the redox process of metallic elements are randomly formed inside oxides, resulting in unexpected and stochastic memristive switching parameters including the operating voltage and the resistance state. Here, we present the guided formation of conductive filaments in Ag nanocone/SiO2 nanomesh/Pt memristors fabricated by high-resolution nanotransfer printing. Consequently, the uniformity of the memristive switching behavior is significantly improved by the existence of electric-field concentrator arrays consisting of Ag nanocones embedded in SiO2 nanomesh structures. This selective and controlled filament growth was experimentally supported by analyzing ... |
| Databáze: | OpenAIRE |
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