Low-Resistance Ohmic Contact Formation by Laser Annealing of N-Implanted 4H-SiC
| Autor: | Mathias Rommel, Tobias Erlbacher, Anton J. Bauer, Oleg Rusch, Carsten Hellinger |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Mechanical Engineering 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Laser annealing Mechanics of Materials 0103 physical sciences Optoelectronics General Materials Science 0210 nano-technology business Low resistance Ohmic contact |
| Zdroj: | Materials Science Forum. 1004:718-724 |
| ISSN: | 1662-9752 |
| Popis: | In this work, pulsed-laser-based tempering was applied for post-implant annealing of n-type N-doped 4H-SiC in order to electrically activate the dopants and to rebuild the crystal structure. The annealing was performed by a frequency-tripled Nd:YVO4laser with a pulse duration of 60 ns. To evaluate the effects of post-implant annealing, JBS diodes were electrically characterized. The results were compared with implanted, not post-annealed JBS diodes. The electrical measurements showed a significant on-state voltage drop of 40 mV at 6 A for post-implant laser annealed diodes compared to not post-implant annealed diodes. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|