Photocurrent and diffusion lengths at the vicinity of grain boundaries (g.b.) in N and P-type polysilicon. Evaluation of the g.b. recombination velocity)
| Autor: | G. Mathian, M. Zehaf, J. Oualid, J.P. Crest, H. Amzil, M. Bonfils, S. Martinuzzi, J. Dugas |
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| Jazyk: | angličtina |
| Rok vydání: | 1982 |
| Předmět: |
Materials science
grain boundary recombination velocity Analytical chemistry 02 engineering and technology diffusion lengths photocurrent 01 natural sciences Molecular physics optical scanning electron hole recombination 0103 physical sciences Grain boundary diffusion coefficient Effective diffusion coefficient photoconductivity elemental semiconductor Diffusion (business) 010302 applied physics Photocurrent carrier lifetime Photoconductivity n type Si silicon grain boundaries Carrier lifetime p Si polycrystal 021001 nanoscience & nanotechnology potential barriers [PHYS.HIST]Physics [physics]/Physics archives Grain boundary elemental semiconductors 0210 nano-technology Recombination |
| Zdroj: | Revue de Physique Appliquée Revue de Physique Appliquée, Société française de physique / EDP, 1982, 17 (3), pp.119-124. ⟨10.1051/rphysap:01982001703011900⟩ |
| ISSN: | 0035-1687 2777-3671 |
| DOI: | 10.1051/rphysap:01982001703011900⟩ |
| Popis: | Photocurrents, diffusion lengths (L) and g.b. recombination velocities (s) have been measured by optical scanning in N and P-type polysilicon. With type of grains, L is found to vary between 5 μm and 150 μm and s is always higher than 104 cm.s-1. The results on local measurements of diffusion lengths show that the vicinity of a g.b. is highly stressed. It seems that the g.b. potential barriers are higher in N-type than in P-type. |
| Databáze: | OpenAIRE |
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