Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films
| Autor: | Jimmy Melskens, Harm C. M. Knoops, Bart Macco, Wilhelmus M. M. Kessels, Ageeth A. Bol, Saravana Balaji Basuvalingam |
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| Přispěvatelé: | Plasma & Materials Processing, Processing of low-dimensional nanomaterials, Atomic scale processing, Center for Quantum Materials and Technology Eindhoven |
| Jazyk: | angličtina |
| Předmět: |
010302 applied physics
Materials science Analytical chemistry Niobium chemistry.chemical_element 02 engineering and technology Surfaces and Interfaces 021001 nanoscience & nanotechnology Condensed Matter Physics Rutherford backscattering spectrometry 01 natural sciences Surfaces Coatings and Films Amorphous solid Elastic recoil detection Atomic layer deposition chemistry.chemical_compound chemistry 0103 physical sciences Niobium oxide Thin film Niobium pentoxide 0210 nano-technology |
| Zdroj: | Journal of Vacuum Science & Technology A Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, 36(4):041503. AVS Science and Technology Society |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.5034097 |
| Popis: | Niobium pentoxide was deposited using tBuN=Nb(NEt2)3 as niobium precursor by both thermal atomic layer deposition (ALD) and plasma-enhanced atomic layer deposition (PE-ALD) with H2O and O2 plasma as coreactants, respectively. The deposition temperature was varied between 150 and 350 °C in both ALD processes. Amorphous films were obtained in all cases. Self-limiting saturated growth was confirmed for both ALD processes along with high uniformity over a 200 mm Si wafer. The PE-ALD process enabled a higher growth per cycle (GPC) than the thermal ALD process (0.56 Å vs 0.38 Å at 200 °C, respectively), while the GPC decreases with increasing temperature in both cases. The high purity of the film was confirmed using Rutherford backscattering spectrometry, elastic recoil detection, and x-ray photoelectron spectroscopy, while the latter technique also confirmed the Nb+5 oxidation state of the niobium oxide films. The thermal ALD deposited films were substoichiometric due to the presence of oxygen vacancies (VO), of which a more dominant presence was observed with increasing deposition temperature. The PE-ALD deposited films were found to be near stoichiometric for all investigated deposition temperatures. |
| Databáze: | OpenAIRE |
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