Strong Electro-Absorption in GeSi Epitaxy on Silicon-on-Insulator (SOI)
| Autor: | Jin Yao, Shirong Liao, Ashok V. Krishnamoorthy, Dazeng Feng, Ivan Shubin, Cheng-Chih Kung, John E. Cunningham, Ying Luo, Xuezhe Zheng, Jin-Hyoung Lee, Kannan Raj, Joan Fong, Hiren D. Thacker, Mehdi Asghari, Guoliang Li, Roshanak Shafiiha |
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| Jazyk: | angličtina |
| Rok vydání: | 2012 |
| Předmět: |
Materials science
Silicon Atomic force microscopy business.industry Mechanical Engineering lcsh:Mechanical engineering and machinery Silicon on insulator chemistry.chemical_element Epitaxy electro-absorption Franz–Keldysh effect Franz-Keldysh effect selective epitaxial growth chemistry Control and Systems Engineering Electronic engineering germanium silicon Optoelectronics lcsh:TJ1-1570 Parasitic extraction Electrical and Electronic Engineering business Diode Dark current |
| Zdroj: | Micromachines, Vol 3, Iss 2, Pp 345-363 (2012) Micromachines Volume 3 Issue 2 Pages 345-363 |
| Popis: | We have investigated the selective epitaxial growth of GeSi bulk material on silicon-on-insulator substrates by reduced pressure chemical vapor deposition. We employed AFM, SIMS, and Hall measurements, to characterize the GeSi heteroepitaxy quality. Optimal growth conditions have been identified to achieve low defect density, low RMS roughness with high selectivity and precise control of silicon content. Fabricated vertical p-i-n diodes exhibit very low dark current density of 5 mA/cm2 at −1 V bias. Under a 7.5 V/µm E-field, GeSi alloys with 0.6% Si content demonstrate very strong electro-absorption with an estimated effective ∆α/α around 3.5 at 1,590 nm. We compared measured ∆α/α performance to that of bulk Ge. Optical modulation up to 40 GHz is observed in waveguide devices while small signal analysis indicates bandwidth is limited by device parasitics. |
| Databáze: | OpenAIRE |
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