Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

Autor: Gyeongmin Yi, Jaekyun Kim, Chang Jun Park, Myung-Seok Choi, Sung Kyu Park
Jazyk: angličtina
Rok vydání: 2015
Předmět:
Zdroj: Materials; Volume 8; Issue 10; Pages: 6926-6934
Materials
Volume 8
Issue 10
Pages 6926-6934
Materials, Vol 8, Iss 10, Pp 6926-6934 (2015)
ISSN: 1996-1944
DOI: 10.3390/ma8105352
Popis: A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT) was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. Octadecylphosphonic acid (ODPA) self-assembled monolayer (SAM) treatment of the AlOx was employed in order to realize high-performance (>
0.4 cm2/Vs saturation mobility) and low-operation-voltage (<
5 V) diketopyrrolopyrrole (DPP)-based OTFTs on an ultra-thin polyimide film (3-μm thick). Thus, low-temperature photochemically-annealed solution-processed AlOx film with SAM layer is an attractive candidate as a dielectric-layer for use in high-performance organic TFTs operated at low voltages.
Databáze: OpenAIRE