Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors
Autor: | Gyeongmin Yi, Jaekyun Kim, Chang Jun Park, Myung-Seok Choi, Sung Kyu Park |
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Jazyk: | angličtina |
Rok vydání: | 2015 |
Předmět: |
Materials science
Annealing (metallurgy) organic thin film transistor Gate dielectric gate dielectric layer self-assembled monolayer photochemical activation low-temperature sol-gel method low-voltage operation Dielectric lcsh:Technology Article chemistry.chemical_compound Vacuum deposition Monolayer General Materials Science lcsh:Microscopy lcsh:QC120-168.85 lcsh:QH201-278.5 lcsh:T business.industry chemistry lcsh:TA1-2040 Thin-film transistor Optoelectronics lcsh:Descriptive and experimental mechanics lcsh:Electrical engineering. Electronics. Nuclear engineering lcsh:Engineering (General). Civil engineering (General) business lcsh:TK1-9971 Polyimide Octadecylphosphonic acid |
Zdroj: | Materials; Volume 8; Issue 10; Pages: 6926-6934 Materials Volume 8 Issue 10 Pages 6926-6934 Materials, Vol 8, Iss 10, Pp 6926-6934 (2015) |
ISSN: | 1996-1944 |
DOI: | 10.3390/ma8105352 |
Popis: | A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT) was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. Octadecylphosphonic acid (ODPA) self-assembled monolayer (SAM) treatment of the AlOx was employed in order to realize high-performance (> 0.4 cm2/Vs saturation mobility) and low-operation-voltage (< 5 V) diketopyrrolopyrrole (DPP)-based OTFTs on an ultra-thin polyimide film (3-μm thick). Thus, low-temperature photochemically-annealed solution-processed AlOx film with SAM layer is an attractive candidate as a dielectric-layer for use in high-performance organic TFTs operated at low voltages. |
Databáze: | OpenAIRE |
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