Analytical Model of Subthreshold Current and Slope for Asymmetric 4-T and 3-T Double-Gate MOSFETs
| Autor: | Amitava DasGupta, Aritra Dey, Nandita DasGupta, Anjan Chakravorty |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Engineering
Subthreshold conduction business.industry media_common.quotation_subject Drain current Galerkin methods Models Port terminals Semiconducting silicon compounds Silicon Analytical model Double gate (DG) Drain-induced barrier lowering (DIBL) Silicon-on-insulator (SOI) Subthreshold current Subthreshold slope MOSFET devices Asymmetry Electronic Optical and Magnetic Materials Gate oxide MOSFET Electronic engineering Optoelectronics Work function Electrical and Electronic Engineering business AND gate Voltage media_common |
| Zdroj: | IEEE Transactions on Electron Devices. 55:3442-3449 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/ted.2008.2006109 |
| Popis: | In this paper, analytical models of subthreshold current and slope for asymmetric four-terminal double-gate (DG) MOSFETs are presented. The models are used to study the subthreshold characteristics with asymmetry in gate oxide thickness, gate material work function, and gate voltage. A model for the subthreshold behavior of three-terminal DG MOSFETs is also presented. The results of the models show excellent match with simulations using MEDICI. The analytical models provide physical insight which is helpful for device design. � 2008 IEEE. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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