In depth nano spectroscopic analysis on homogeneously switching double barrier memristive devices
| Autor: | Krishna Kanth Neelisetty, Georg Haberfehlner, Julian Strobel, Martin Ziegler, Venkata Sai Kiran Chakravadhanula, Gerald Kothleitner, Sven Dirkmann, Christian Kübel, Lorenz Kienle, Hermann Kohlstedt, Radian Popescu, Mirko Hansen, Thomas Mussenbrock |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Condensed Matter - Materials Science Materials science Schottky barrier Oxide General Physics and Astronomy Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences 02 engineering and technology 021001 nanoscience & nanotechnology Microstructure Thermal conduction 01 natural sciences Molecular physics chemistry.chemical_compound chemistry 0103 physical sciences Nano Electrode Kinetic Monte Carlo 0210 nano-technology Spectroscopy |
| DOI: | 10.48550/arxiv.1703.06741 |
| Popis: | Memristors based on a double barrier design have been analysed by various nano spectroscopic methods to unveil details about its microstructure and conduction mechanism. The device consists of an AlOx tunnel barrier and a NbOy/Au Schottky barrier sandwiched between Nb bottom electrode and Au top electrode. As it was anticipated that the local chemical composition of the tunnel barrier, i.e. oxidation state of the metals as well as concentration and distribution of oxygen ions, have a major influence on electronic conduction, these factors were carefully analysed. A combined approach was chosen in order to reliably investigate electronic states of Nb and O by electron energy-loss spectroscopy as well as map elements whose transition edges exhibit a different energy range by energy-dispersive X-ray spectroscopy like Au and Al. The results conclusively demonstrate significant oxidation of the bottom electrode as well as a small oxygen vacancy concentration in the Al oxide tunnel barrier. Possible scenarios to explain this unexpected additional oxide layer are discussed and kinetic Monte Carlo simulations were applied in order to identify its influence on conduction mechanisms in the device. In light of the strong deviations between observed and originally sought layout, this study highlights the robustness in terms of structural deviations of the double barrier memristor device. |
| Databáze: | OpenAIRE |
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