A high dielectric constant non-fullerene acceptor for efficient bulk-heterojunction organic solar cells
Autor: | Kai Zhang, Fei Huang, Boming Xie, Baobing Fan, Chunhui Duan, Yong Cao, Fallon J. M. Colberts, Raj René Janssen, Baojun Lin, Wei Ma, Zhaojing Wang, Xi Liu |
---|---|
Přispěvatelé: | Molecular Materials and Nanosystems, Macromolecular and Organic Chemistry |
Jazyk: | angličtina |
Rok vydání: | 2018 |
Předmět: |
Materials science
Organic solar cell Renewable Energy Sustainability and the Environment business.industry Energy conversion efficiency Relative permittivity 02 engineering and technology General Chemistry Dielectric 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Acceptor Polymer solar cell 0104 chemical sciences Organic semiconductor Optoelectronics General Materials Science SDG 7 - Affordable and Clean Energy 0210 nano-technology business SDG 7 – Betaalbare en schone energie High-κ dielectric |
Zdroj: | Journal of Materials Chemistry A, 6(2), 395-403. Royal Society of Chemistry |
ISSN: | 2050-7496 2050-7488 |
Popis: | The majority of organic semiconductors have a low relative dielectric constant (ϵr < 6), which is an important limitation for organic solar cells (OSCs). A high dielectric constant would reduce the exciton binding energy, reduce charge carrier recombination losses, and thereby enhance the overall device performance of OSCs. However, the development of organic/polymeric semiconductors with higher relative dielectric constants (ϵr > 6) has attracted a very limited attention. Moreover, high performance OSCs based on high dielectric constant photovoltaic materials are still in their infancy. Herein, we report an oligoethylene oxide side chain-containing non-fullerene acceptor (ITIC-OE) with a high relative dielectric constant of ϵr ≈ 9.4, which is two times larger than that of its alkyl chain-containing counterpart ITIC. Encouragingly, the OSCs based on ITIC-OE show a high power conversion efficiency of 8.5%, which is the highest value for OSCs that employ high dielectric constant materials. Nevertheless, this value is lower than those of ITIC-based control devices. The less phase-separated morphology in blend films due to the reduced crystallinity of ITIC-OE and the too good miscibility between PBDB-T and ITIC-OE are responsible for the lower device performance. This work suggests additional prerequisites to make high dielectric constants play a significant role in OSCs. |
Databáze: | OpenAIRE |
Externí odkaz: |