Uniaxially stressed germanium with fundamental direct band gap
| Autor: | Geiger, R., Zabel, T., Marin, E., Gassenq, A., Hartmann, J. -M., Widiez, J., Escalante, J., Guilloy, K., Pauc, N., Rouchon, D., Diaz, G. Osvaldo, Tardif, S., Rieutord, F., Duchemin, I., Niquet, Y. -M., Reboud, V., Calvo, V., Chelnokov, A., Faist, J., Sigg, H. |
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| Rok vydání: | 2016 |
| Předmět: | |
| DOI: | 10.48550/arxiv.1603.03454 |
| Popis: | We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain. Cooling the bridges to 20 K increases the uniaxial strain up to a maximum of 5.4%. Temperature-dependent photoluminescence reveals the crossover to a fundamental direct band gap to occur between 4.0% and 4.5%. Our data are in good agreement with new theoretical computations that predict a strong bowing of the band parameters with strain. Comment: 9 pages, 8 figures |
| Databáze: | OpenAIRE |
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