1150-nm wavelength InGaAs/GaAs VCSELs incorporating regrown tunnel junctions

Autor:	Lukas Mutter, Eli Kapon, Vladimir Iakovlev, Alexei Sirbu, Andrei Caliman, Alexandru Mereuta
Rok vydání:	2008
Předmět:	Inorganic Chemistry Distributed feedback laser Wavelength Materials science Web of science business.industry Ingaas gaas Materials Chemistry Optoelectronics Condensed Matter Physics business
Zdroj:	Journal of Crystal Growth. 310:5178-5181
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2008.07.093
Popis:	Reference LPN-ARTICLE-2009-004doi:10.1016/j.jcrysgro.2008.07.093View record in Web of Science Record created on 2009-02-09, modified on 2017-12-03
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::609ff3246a541b66bfbf13594acfbb53 https://doi.org/10.1016/j.jcrysgro.2008.07.093 Zobrazit plný text záznamu Full Text from ScienceDirect