A Substrate-Dissipating (SD) Mechanism for a Ruggedness-Improved SOI LDMOS Device
| Autor: | Bing Wang, Zhigang Wang, James B. Kuo |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Soi ldmos Parasitic bipolar transistor 02 engineering and technology Substrate (electronics) Edge (geometry) 01 natural sciences 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Electrical and Electronic Engineering Device simulation 010302 applied physics business.industry 020208 electrical & electronic engineering Bipolar junction transistor self-heating SOI LDMOS avalanche current Avalanche breakdown Unclamped inductive switching (UIS) Electronic Optical and Magnetic Materials Mechanism (engineering) parasitic BJT Optoelectronics substrate-dissipating (SD) lcsh:Electrical engineering. Electronics. Nuclear engineering business lcsh:TK1-9971 Biotechnology |
| Zdroj: | IEEE Journal of the Electron Devices Society, Vol 6, Pp 739-746 (2018) |
| ISSN: | 2168-6734 |
| DOI: | 10.1109/jeds.2018.2831278 |
| Popis: | An SOI LDMOS device with improved ruggedness under unclamped inductive switching (UIS) is described based on the substrate-dissipating (SD) mechanism. The key feature of this device is the introduction of a Γ-shape P-island window with a relatively high doping concentration to connect the N-drift region to the P-substrate under the source, which is designed to achieve an avalanche breakdown point at the edge of the P-island instead of near the gate contact. Thus, the avalanche current is shortened to the substrate contact through the P-island and the P-substrate, avoiding the avalanche current to pass through the N± source/P-well junction and thus suppressing the activation of the parasitic bipolar transistor with a relaxed self-heating effect especially in the P-well region. As verified by the Medici device simulation results, the SD mechanism of the device under the UIS condition, may endure a remarkably higher avalanche current as compared with the conventional SOI LDMOS device. |
| Databáze: | OpenAIRE |
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