Oblique angle deposited InN quantum dots array for infrared detection
Autor: | Satyaban Bhunia, P. Chinnamuthu, Punam Murkute, Shyam Murli Manohar Dhar Dwivedi, Aniruddha Mondal, Subhananda Chakrabarti, Hemant Ghadi, Anupam Ghosh, Shubhro Chakrabartty |
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Rok vydání: | 2018 |
Předmět: |
Photoluminescence
Indium nitride Materials science Infrared Band gap BAND-GAP 02 engineering and technology EPITAXY FILMS Infrared detector 01 natural sciences DEPENDENT PHOTOLUMINESCENCE PROPERTIES Responsivity chemistry.chemical_compound SUBSTRATE 0103 physical sciences Materials Chemistry 010302 applied physics Quantum dots ORIGIN business.industry NANOSTRUCTURE Mechanical Engineering Metals and Alloys 021001 nanoscience & nanotechnology Blueshift ROOM-TEMPERATURE SI(111) chemistry Mechanics of Materials Quantum dot Oblique angle deposition GROWTH Optoelectronics Quantum efficiency 0210 nano-technology business |
Zdroj: | Journal of Alloys and Compounds. 766:297-304 |
ISSN: | 0925-8388 |
Popis: | Indium Nitride (InN) quantum dots (QDs) were synthesized on Si substrate by oblique angle deposition method. The deposited InN QDs were of the order of 5-50 nm in diameter with density similar to 7 x 10(9)/cm(2) . The synthesized InN QDs were nearly single crystalline, confirmed from the diffraction peak in the < 110 > direction. Photoluminescence (PL) measurement showed peak emission at similar to 1138 nm (1.08 eV) at 19 K. The PL emission energy exhibited blue shift and the intensity reduced with an increase in temperature. The high optical band gap emission of the InN QDs is possibly due to energy level quantization resulted from size reduction. The free carrier concentration was found to be similar to 2 x 10(18) cm(-3). The device selectively detected the 1080 nm (1.13 eV) wavelength with maximum responsivity near the optical band edge at 10 K and room temperature (300 K) respectively. The external quantum efficiency of similar to 4.1% was calculated for the detector at 10 K. The device showed excellent temporal response with rise and fall times of 3.181 s and 3.408 s respectively at 10 K. (C) 2018 Elsevier B.V. All rights reserved. |
Databáze: | OpenAIRE |
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