Oblique angle deposited InN quantum dots array for infrared detection

Autor: Satyaban Bhunia, P. Chinnamuthu, Punam Murkute, Shyam Murli Manohar Dhar Dwivedi, Aniruddha Mondal, Subhananda Chakrabarti, Hemant Ghadi, Anupam Ghosh, Shubhro Chakrabartty
Rok vydání: 2018
Předmět:
Zdroj: Journal of Alloys and Compounds. 766:297-304
ISSN: 0925-8388
Popis: Indium Nitride (InN) quantum dots (QDs) were synthesized on Si substrate by oblique angle deposition method. The deposited InN QDs were of the order of 5-50 nm in diameter with density similar to 7 x 10(9)/cm(2) . The synthesized InN QDs were nearly single crystalline, confirmed from the diffraction peak in the < 110 > direction. Photoluminescence (PL) measurement showed peak emission at similar to 1138 nm (1.08 eV) at 19 K. The PL emission energy exhibited blue shift and the intensity reduced with an increase in temperature. The high optical band gap emission of the InN QDs is possibly due to energy level quantization resulted from size reduction. The free carrier concentration was found to be similar to 2 x 10(18) cm(-3). The device selectively detected the 1080 nm (1.13 eV) wavelength with maximum responsivity near the optical band edge at 10 K and room temperature (300 K) respectively. The external quantum efficiency of similar to 4.1% was calculated for the detector at 10 K. The device showed excellent temporal response with rise and fall times of 3.181 s and 3.408 s respectively at 10 K. (C) 2018 Elsevier B.V. All rights reserved.
Databáze: OpenAIRE