Developing High Performance GaP/Si Heterojunction Solar Cells
| Autor: | Som N. Dahal, Chaomin Zhang, Ehsan Vadiee, Christiana B. Honsberg, Richard R. King |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
General Immunology and Microbiology Phosphines business.industry General Chemical Engineering General Neuroscience Photovoltaic system Silicones Gallium Phosphorus Heterojunction Carrier lifetime Microscopy Atomic Force Epitaxy General Biochemistry Genetics and Molecular Biology Diffusion Crystal X-Ray Diffraction Photovoltaics Solar Energy Sunlight Optoelectronics business Current density Molecular beam epitaxy |
| Zdroj: | Journal of Visualized Experiments. |
| ISSN: | 1940-087X |
| DOI: | 10.3791/58292 |
| Popis: | To improve the efficiency of Si-based solar cells beyond their Shockley-Queisser limit, the optimal path is to integrate them with III-V-based solar cells. In this work, we present high performance GaP/Si heterojunction solar cells with a high Si minority-carrier lifetime and high crystal quality of epitaxial GaP layers. It is shown that by applying phosphorus (P)-diffusion layers into the Si substrate and a SiNx layer, the Si minority-carrier lifetime can be well-maintained during the GaP growth in the molecular beam epitaxy (MBE). By controlling the growth conditions, the high crystal quality of GaP was grown on the P-rich Si surface. The film quality is characterized by atomic force microscopy and high-resolution x-ray diffraction. In addition, MoOx was implemented as a hole-selective contact that led to a significant increase in the short-circuit current density. The achieved high device performance of the GaP/Si heterojunction solar cells establishes a path for further enhancement of the performance of Si-based photovoltaic devices. |
| Databáze: | OpenAIRE |
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