Interface engineering for Ge metal-oxide-semiconductor devices
| Autor: | E. K. Evangelou, A. Sotiropoulos, Y. Panayiotatos, Sabina Spiga, Thierry Conard, Michel Houssa, S. Ferrari, Marc Heyns, David P. Brunco, Athanasios Dimoulas, Jin Won Seo, Matty Caymax, Marco Fanciulli, Ch. Dieker, S. F. Galata |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
Passivation PASSIVATION Oxide chemistry.chemical_element Germanium Hardware_PERFORMANCEANDRELIABILITY GERMANIUM Atomic layer deposition chemistry.chemical_compound GATE DIELECTRICS Hardware_INTEGRATEDCIRCUITS Materials Chemistry business.industry Metals and Alloys Surfaces and Interfaces Semiconductor device Surfaces Coatings and Films Electronic Optical and Magnetic Materials Semiconductor chemistry Optoelectronics Field-effect transistor HFO2 business ATOMIC LAYER DEPOSITION Molecular beam epitaxy |
| Zdroj: | Thin solid films 515 (2007): 6337–6343. doi:10.1016/j.tsf.2006.11.129 info:cnr-pdr/source/autori:Dimoulas, A; Brunco, DP; Ferrari, S; Seo, JW; Panayiotatos, Y; Sotiropoulos, A; Conard, T; Caymax, M; Spiga, S; Fanciulli, M; Dieker, C; Evangelou, EK; Galata, S; Houssa, M; Heyns, MM/titolo:Interface engineering for Ge metal-oxide-semiconductor devices/doi:10.1016%2Fj.tsf.2006.11.129/rivista:Thin solid films (Print)/anno:2007/pagina_da:6337/pagina_a:6343/intervallo_pagine:6337–6343/volume:515 |
| DOI: | 10.1016/j.tsf.2006.11.129 |
| Popis: | High mobility semiconductors such as Ge with high-k gates may be required to enhance performance of future devices. One of the biggest challenges for the development of a Ge metal-oxide-semiconductor (MOS) technology is to find appropriate passivating materials and methodologies for the Ge/high-k interfaces. Germanium oxynitride is frequently used as a passivating interlayer in combination with HfO2 and is found to be necessary for the fabrication of functional devices. However, it is also considered to be insufficient since electrical characteristics in capacitors are non-ideal and field effect transistors underperform, probably due to a the high density of interface defects. We show that alternative passivating rate earth oxide layers prepared by molecular beam deposition produce improved electrical characteristics and a significant reduction of the density of interface states. In the case of CeO2, a thick interfacial layer is spontaneously formed containing oxidized Ge, which is considered to be the key for the observed improvements. (C) 2006 Elsevier B.V. All rights reserved. |
| Databáze: | OpenAIRE |
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