Single-Dislocation Schottky Diodes
| Autor: | Yuichi Ikuhara, Ang Tao, Tingting Yao, Hiromichi Ohta, Yixiao Jiang, Xiuliang Ma, Xuexi Yan, Lixin Yang, Hengqiang Ye, C.H. Chen |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Materials science
business.industry Mechanical Engineering Schottky diode Bioengineering 02 engineering and technology General Chemistry Conductive atomic force microscopy Conductivity 021001 nanoscience & nanotechnology Condensed Matter Physics Ion Electrical resistivity and conductivity Transmission electron microscopy Optoelectronics General Materials Science Dislocation Thin film 0210 nano-technology business |
| Zdroj: | Nano Letters. 21:5586-5592 |
| ISSN: | 1530-6992 1530-6984 |
| DOI: | 10.1021/acs.nanolett.1c01081 |
| Popis: | Dislocations often exhibit unique physical properties distinct from those of the bulk material. However, functional applications of dislocations are challenging due to difficulties in the construction of high-performance devices of dislocations. Here we demonstrate unidirectional single-dislocation Schottky diode arrays in a Fe2O3 thin film on Nb-doped SrTiO3 substrates. Conductivity measurements using conductive atomic force microscopy indicate that a net current will flow through individual dislocation Schottky diodes under forward bias and disappear under reverse bias. Under cyclic bias voltages, the single-dislocation Schottky diodes exhibit a distinct resistive switching behavior containing low-resistance and high-resistance states with a high resistance ratio of ∼103. A combined study of transmission electron microscopy and first-principles calculations reveals that the Fe2O3 dislocations comprise mixed Fe2+ and Fe3+ ions due to O deficiency and exhibit a one-dimensional electrical conductivity. The single-dislocation Schottky diodes may find applications for developing ultrahigh-density electronic and memory devices. |
| Databáze: | OpenAIRE |
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