Bridge Resistance Compensation for Noise Reduction in a Self-Balanced PHMR Sensor
| Autor: | Yong-Ho Lee, Byeonghwa Lim, Jae-Hoon Lee, Taehyeong Jeon, Changyeop Jeon, CheolGi Kim, Proloy T. Das |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Materials science
Magnetoresistance Noise reduction 02 engineering and technology TP1-1185 01 natural sciences Biochemistry Noise (electronics) Analytical Chemistry Compensation (engineering) magnetoresistive sensors Electrical and Electronic Engineering Instrumentation Microelectromechanical systems Input offset voltage business.industry Noise spectral density Communication Chemical technology 010401 analytical chemistry 021001 nanoscience & nanotechnology Atomic and Molecular Physics and Optics 0104 chemical sciences Magnetic field planar Hall magnetoresistance self-balanced bridge Optoelectronics offset compensation 0210 nano-technology business |
| Zdroj: | Sensors, Vol 21, Iss 3585, p 3585 (2021) Sensors (Basel, Switzerland) |
| ISSN: | 1424-8220 |
| Popis: | Advanced microelectromechanical system (MEMS) magnetic field sensor applications demand ultra-high detectivity down to the low magnetic fields. To enhance the detection limit of the magnetic sensor, a resistance compensator integrated self-balanced bridge type sensor was devised for low-frequency noise reduction in the frequency range of 0.5 Hz to 200 Hz. The self-balanced bridge sensor was a NiFe (10 nm)/IrMn (10 nm) bilayer structure in the framework of planar Hall magnetoresistance (PHMR) technology. The proposed resistance compensator integrated with a self-bridge sensor architecture presented a compact and cheaper alternative to marketable MEMS MR sensors, adjusting the offset voltage compensation at the wafer level, and led to substantial improvement in the sensor noise level. Moreover, the sensor noise components of electronic and magnetic origin were identified by measuring the sensor noise spectral density as a function of temperature and operating power. The lowest achievable noise in this device architecture was estimated at ~3.34 nV/Hz at 100 Hz. |
| Databáze: | OpenAIRE |
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