Interaction of Radiation-Induced Self-Interstitials with Vacancy-Oxygen Related Defects VnO2 (n from 1 to 3) in Silicon
| Autor: | Vladimir P. Markevich, Anthony R. Peaker, L.I. Murin, B. G. Svensson, Jack Mullins, Ekaterina A. Tolkacheva, Stanislau B. Lastovskii |
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| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Silicon chemistry.chemical_element Radiation induced 02 engineering and technology Surfaces and Interfaces 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Molecular physics Oxygen Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Vacancy defect 0103 physical sciences Materials Chemistry Electron beam processing Electrical and Electronic Engineering 0210 nano-technology |
| Zdroj: | Murin, L I, Tolkacheva, E A, Lastovskii, S B, Markevich, V P, Mullins, J, Peaker, A R & Svensson, B G 2018, ' Interaction of Radiation-Induced Self-Interstitials with Vacancy-Oxygen Related Defects VnO2 (n from 1 to 3) in Silicon ', Physica Status Solidi. A: Applications and Materials Science . https://doi.org/10.1002/pssa.201800609 |
| Popis: | Two stage electron irradiation with thermal heat‐treatments after each stage is used for vacancy‐oxygen‐related defect engineering in Czochralski‐grown silicon (Cz‐Si). The Cz‐Si samples are first irradiated at room temperature with 2.5 MeV electrons and then heat‐treated at 320 °C to anneal out the VO, V2O, and V3O centers and generate the VO2, V2O2, and V3O2 complexes as the dominant vacancy‐oxygen‐related defects. Subsequently, the samples are irradiated at room temperature again and subjected to 30‐min isochronal annealing in the temperature range 75–350 °C. Defect evolution upon the treatments is monitored by means of the local vibrational mode (LVM) absorption spectroscopy. From an analysis of changes in intensity of the LVM lines it is revealed that the second irradiation results in a noticeable decrease in the concentrations of the VO2, V2O2, and V3O2 complexes and an increase in the concentrations of the oxygen dimer and the VO2* defect (metastable state of VO2, which consists of the VO and Oi components). The observed defect transformations are argued to be related to interactions of the radiation‐induced self‐interstitial silicon atoms (I) with the vacancy‐oxygen complexes via the following reactions: VO2 + I → O2i, V3O2 + I → V2O2, V2O2 + I → VO2*. |
| Databáze: | OpenAIRE |
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