Enhanced Emission Efficiency of Deep Ultraviolet Light-Emitting AlGaN Multiple Quantum Wells Grown on an N-AlGaN Underlying Layer
| Autor: | Yuta Miyachi, Takashi Egawa, Makoto Miyoshi, Lei Li |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
lcsh:Applied optics. Photonics
n-AlGaN underlying layer (UL) 02 engineering and technology medicine.disease_cause quantum-confined Stark effect (QCSE) 01 natural sciences symbols.namesake Electric field 0103 physical sciences Ultraviolet light medicine lcsh:QC350-467 Spontaneous emission Stimulated emission AlGaN multiple quantum wells (MQWs) Electrical and Electronic Engineering recombination process 010302 applied physics Physics business.industry Wide-bandgap semiconductor lcsh:TA1501-1820 021001 nanoscience & nanotechnology Atomic and Molecular Physics and Optics Stark effect symbols Optoelectronics Light emission 0210 nano-technology business Ultraviolet lcsh:Optics. Light |
| Zdroj: | IEEE Photonics Journal, Vol 8, Iss 5, Pp 1-10 (2016) |
| ISSN: | 1943-0655 |
| Popis: | Remarkably enhanced light emission efficiency of AlGaN multiple quantum wells (MQWs) was realized by growing on an n-AlGaN underlying layer (UL). The parasitic peaks emitting from inactive regions can be effectively suppressed, and the nonradiative recombination process in AlGaN MQWs proved to be substantially lessened with the inclusion of the n-AlGaN UL. Numerical simulations showed that the electric field in AlGaN MQWs was reduced by 26%, which efficiently weakened the quantum-confined Stark effect (QCSE). Further analysis attributed this to the reduction of strain-induced piezoelectric electric field in the AlGaN well layer. The enhanced emission efficiency of AlGaN MQWs was therefore due to the greatly suppressed nonradiative recombination and reduced QCSE with the introduction of the n-AlGaN UL. The present research will be helpful to the future promotion of high-performance deep ultraviolet (DUV) optoelectronic devices, as well as to better understanding the recombination mechanism in AlGaN MQWs. |
| Databáze: | OpenAIRE |
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