Undulation of sub-100 nm porous dielectric structures: A mechanical analysis
| Autor: | Joaquim Torres, S. Maitrejean, Maxime Darnon, T. Chevolleau, J.C. Barbe, Olivier Joubert |
|---|---|
| Přispěvatelé: | Laboratoire des technologies de la microélectronique (LTM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG), Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2007 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) business.industry Nanotechnology 02 engineering and technology Dielectric Integrated circuit Nitride 021001 nanoscience & nanotechnology 01 natural sciences Strain energy law.invention Buckling 13. Climate action Residual stress law 0103 physical sciences Microelectronics Composite material 0210 nano-technology business Porosity ComputingMilieux_MISCELLANEOUS |
| Zdroj: | Applied Physics Letters Applied Physics Letters, American Institute of Physics, 2007, pp.91 Applied Physics Letters, 2007, pp.91 |
| ISSN: | 0003-6951 |
| Popis: | In microelectronics technologies, patterning of sub-100nm width ridges capped with a titanium nitride mask can lead to undulations of the ridges detrimental to performances. This phenomenon is observed with highly compressive residual stress into the mask (>2GPa), with dielectrics with low elastic properties (E 230nm). Experiments and simulations show that undulations can originate from buckling which allows the release of the strain energy initially stored in the mask. Simulations predict that the dielectric material undulations can become an issue for porous dielectrics integration in the next generations of integrated circuits (2016 and later). |
| Databáze: | OpenAIRE |
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