Bandgap Energy of Wurtzite InAs Nanowires
| Autor: | Mario Capizzi, Michele B. Rota, Chennupati Jagadish, A. S. Ameruddin, Antonio Polimeni, A. Miriametro, Francesco Mura, Qiang Gao, Hark Hoe Tan, H. Aruni Fonseka |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Condensed matter physics Band gap Mechanical Engineering Nanowire Bioengineering 02 engineering and technology General Chemistry Chemical vapor deposition 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Crystallography bandgap energy polarization degree steady-state photoluminescence Wurtzite InAs nanowires Chemistry (all) Materials Science (all) Transmission electron microscopy 0103 physical sciences General Materials Science Selected area diffraction 010306 general physics 0210 nano-technology Polarization (electrochemistry) Electronic band structure Wurtzite crystal structure |
| Zdroj: | Nano Letters. 16:5197-5203 |
| ISSN: | 1530-6992 1530-6984 |
| DOI: | 10.1021/acs.nanolett.6b02205 |
| Popis: | InAs nanowires (NWs) have been grown on semi-insulating InAs (111)B substrates by metal-organic chemical vapor deposition catalyzed by 50, 100, and 150 nm-sized Au particles. The pure wurtzite (WZ) phase of these NWs has been attested by high-resolution transmission electron microscopy and selected area diffraction pattern measurements. Low temperature photoluminescence measurements have provided unambiguous and robust evidence of a well resolved, isolated peak at 0.477 eV, namely 59 meV higher than the band gap of ZB InAs. The WZ nature of this energy band has been demonstrated by high values of the polarization degree, measured in ensembles of NWs both as-grown and mechanically transferred onto Si and GaAs substrates, in agreement with the polarization selection rules for WZ crystals. The value of 0.477 eV found here for the bandgap energy of WZ InAs agrees well with theoretical calculations. |
| Databáze: | OpenAIRE |
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