Monolayer-Scale GaN/AlN Multiple Quantum Wells for High Power e-Beam Pumped UV-Emitters in the 240-270 nm Spectral Range

Autor: Dmitrii V. Nechaev, Tao Wang, Xinqiang Wang, D. E. Sviridov, Stefan Ivanov, N. A. Gamov, Nikita D. Prasolov, Lars Grieger, Yixin Wang, Vladimir I. Kozlovsky, Mikhail Zverev, Kseniya Orekhova, V. N. Jmerik
Rok vydání: 2021
Předmět:
Zdroj: Nanomaterials
Nanomaterials, Vol 11, Iss 2553, p 2553 (2021)
Volume 11
Issue 10
ISSN: 2079-4991
Popis: Monolayer (ML)-scale GaN/AlN multiple quantum well (MQW) structures for electron-beam-pumped ultraviolet (UV) emitters are grown on c-sapphire substrates by using plasma-assisted molecular beam epitaxy under controllable metal-rich conditions, which provides the spiral growth of densely packed atomically smooth hillocks without metal droplets. These structures have ML-stepped terrace-like surface topology in the entire QW thickness range from 0.75–7 ML and absence of stress at the well thickness below 2 ML. Satisfactory quantum confinement and mitigating the quantum-confined Stark effect in the stress-free MQW structures enable one to achieve the relatively bright UV cathodoluminescence with a narrow-line (~15 nm) in the sub-250-nm spectral range. The structures with many QWs (up to 400) exhibit the output optical power of ~1 W at 240 nm, when pumped by a standard thermionic-cathode (LaB6) electron gun at an electron energy of 20 keV and a current of 65 mA. This power is increased up to 11.8 W at an average excitation energy of 5 µJ per pulse, generated by the electron gun with a ferroelectric plasma cathode at an electron-beam energy of 12.5 keV and a current of 450 mA.
Databáze: OpenAIRE