Characterization of Silicon Crystals Grown from Melt in a Granulate Crucible
| Autor: | Matthias Müller, K. Dadzis, Robert Menzel, U. Juda, M. Ehrl, C. Reimann, C. Kranert, Klaus Irmscher, Helge Riemann, R. Weingärtner, Nickolay Abrosimov |
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| Přispěvatelé: | Publica |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Silicon chemistry.chemical_element Crucible Crystal growth 02 engineering and technology 01 natural sciences Crystal Impurity 0103 physical sciences Materials Chemistry Electrical and Electronic Engineering Konferenzschrift 010302 applied physics carrier lifetime silicon Carrier lifetime 021001 nanoscience & nanotechnology Condensed Matter Physics Crystallographic defect Electronic Optical and Magnetic Materials chemistry Chemical engineering defect characterization Dislocation 0210 nano-technology |
| DOI: | 10.34657/9214 |
| Popis: | The growth of silicon crystals from a melt contained in a granulate crucible significantly differs from the classical growth techniques because of the granulate feedstock and the continuous growth process. We performed a systematic study of impurities and structural defects in several such crystals with diameters up to 60 mm. The possible origin of various defects is discussed and attributed to feedstock (concentration of transition metals), growth setup (carbon concentration), or growth process (dislocation density), showing the potential for further optimization. A distinct correlation between crystal defects and bulk carrier lifetime is observed. A bulk carrier lifetime with values up to 600 μs on passivated surfaces of dislocation-free parts of the crystal is currently achieved. |
| Databáze: | OpenAIRE |
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