Defect-Moderated Oxidative Etching of MoS2
| Autor: | Georg S. Duesberg, Pierce Maguire, Jakub Jadwiszczak, Hongzhou Zhang, Maria O'Brien, Niall McEvoy, Darragh Keane |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Scanning electron microscope FOS: Physical sciences General Physics and Astronomy 02 engineering and technology 01 natural sciences Focused ion beam law.invention symbols.namesake Optical microscope Etching (microfabrication) law 0103 physical sciences Monolayer 010302 applied physics Condensed Matter - Materials Science Bilayer fungi technology industry and agriculture Materials Science (cond-mat.mtrl-sci) 021001 nanoscience & nanotechnology Chemical engineering symbols 0210 nano-technology Raman spectroscopy Field ion microscope |
| Popis: | We report a simple technique for the selective etching of bilayer and monolayer MoS$_2$. In this work, chosen regions of MoS$_2$ were activated for oxygen adsorption and reaction by the application of low doses of He$^+$ at 30 keV in a gas ion microscope. Raman spectroscopy, optical microscopy and scanning electron microscopy were used to characterize both the etched features and the remaining material. It has been found that by using a pre-treatment to introduce defects, MoS$_2$ can be etched very efficiently and with high region specificity by heating in air. 8 pages, 6 figures |
| Databáze: | OpenAIRE |
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