Growth and characterization of metal-organic vapour phase epitaxial Ga1−xInxAsySb1−y quaternary layers
| Autor: | Frédérique Pascal-Delannoy, M. Bow, G. G. Allogho, Alain Giani, J. Bougnot, J. Kaoukab, G. Bougnot |
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| Přispěvatelé: | Centre d'Electronique et de Micro-optoélectronique de Montpellier (CEM2), Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 1991 |
| Předmět: |
010302 applied physics
Diffraction Materials science Spinodal decomposition Mechanical Engineering Analytical chemistry Mineralogy Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences [SPI.TRON]Engineering Sciences [physics]/Electronics Metal Mechanics of Materials visual_art Lattice (order) 0103 physical sciences visual_art.visual_art_medium General Materials Science Metalorganic vapour phase epitaxy 0210 nano-technology Quaternary ComputingMilieux_MISCELLANEOUS |
| Zdroj: | Materials Science and Engineering: B Materials Science and Engineering: B, Elsevier, 1991, 9 (1-3), pp.121-124. ⟨10.1016/0921-5107(91)90159-S⟩ |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/0921-5107(91)90159-s |
| Popis: | The growth in the miscibility gap and the characterization of MOVPE Ga1−xInxAsySb1−y quaternary layers have been undertaken. The experimental conditions have been determined to obtain quaternary epilayers in the miscibility gap grown on GaSb with a good morphology even for lattice mismatched layers, in varying ΣPIII and DH2. The material quality has been assessed by single and double X-ray diffraction. The spectral responses of GaInAsSb(p)/GaSb(n) heterojunction are given. A spectral response obtained under illumination from the GaSb side, presents a good response at 2.75 μm. |
| Databáze: | OpenAIRE |
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