Tuning the band gap of semiconducting carbon nanotube by an axial magnetic field
Autor: | Fedorov, G., Barbara, P., Smirnov, D., Jiménez Jiménez, David, Roche, Stephan, American Physical Society |
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Rok vydání: | 2021 |
Předmět: |
Nanotube
Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Band gap Carbon nanotubes Nanotechnology Band structure Semiconductor growth Field effect transistors Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Semimetal Carbon nanotube field-effect transistor Carbon nanotube quantum dot Optical properties of carbon nanotubes Condensed Matter::Materials Science Magnetic fields Semiconductor nanotubes Direct and indirect band gaps Nanotube devices Activation energies Electronic band structure Electrodes |
Zdroj: | Recercat. Dipósit de la Recerca de Catalunya instname Dipòsit Digital de Documents de la UAB Universitat Autònoma de Barcelona Recercat: Dipósit de la Recerca de Catalunya Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
Popis: | We have investigated the magnetic field dependence of transfer characteristics of a device fabricated in a configuration of a field-effect transistor with a conduction channel formed by a semiconducting multiwalled carbon nanotube. Our results unambiguously indicate that an axial magnetic field suppresses the band gap of the nanotube. Quantitative analysis of the data indicates linear dependence of the band gap on magnetic field as well as a linear splitting between the K and K' subbands of the band structure of the nanotube. |
Databáze: | OpenAIRE |
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