GaN Nanorod Schottky and p−n Junction Diodes

Autor:	Timothy D. Sands, Yexian Qin, Parijat Deb, Ronald G. Reifenberger, Hogyoung Kim, Mark Oliver, Roya R. Lahiji
Rok vydání:	2006
Předmět:	Materials science Electrical junction business.industry Mechanical Engineering Schottky barrier Schottky diode Bioengineering General Chemistry Conductive atomic force microscopy Condensed Matter Physics Breakdown voltage Optoelectronics General Materials Science Nanorod p–n junction business Diode
Zdroj:	Nano Letters. 6:2893-2898
ISSN:	1530-6992 1530-6984
Popis:	Conductive atomic force microscopy has been used to characterize single GaN nanorod Schottky and p-n junction diodes. The ideality factor, reverse breakdown voltage, and the Schottky barrier height of individual nanorod diodes were compared to those from conventional thin-film diodes. Large-area contacts, enabling diodes with arrays of GaN nanorods in parallel, were also fabricated and their electrical characteristics investigated. The defect-free nature of the GaN nanorods and enhanced tunneling effects due to nanoscale contacts have been invoked to explain the electrical behavior of the nanorod diodes.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f2e1bba3c654ec470a70c05ad263bdc https://doi.org/10.1021/nl062152j Zobrazit plný text záznamu