Strong Blue and Violet Photo- and Electroluminescence from Ge- and Si-Implanted Silicon Dioxide

Autor:	Andreas Markwitz, Ida E. Tyschenko, H. Fröb, Bernd Schmidt, Lars Rebohle, W. Skoruba, R. Grötzschel, Karl Leo, J. von Borany
Rok vydání:	1998
Předmět:	chemistry.chemical_compound Materials science chemistry Silicon dioxide business.industry Optoelectronics Electroluminescence Condensed Matter Physics business Electronic Optical and Magnetic Materials
Zdroj:	Phys. Stat. Sol. (a) 165 (1998) 31
ISSN:	1521-396X 0031-8965
DOI:	10.1002/(sici)1521-396x(199801)165:1<31::aid-pssa31>3.0.co;2-y
Popis:	The photoluminescence (PL) and electroluminescence (EL) properties of Ge-implanted SiO2 films thermally-grown on a Si substrate have been investigated and compared to those of Si-implanted SiO2 films. It is found that the blue-violet PL from both Si and Ge-rich layers reaches a maximum after annealing at 500°C for 30 min. The PL and EL from Ge-implanted SiO2 are distinctly higher than that from Si-implanted layers and well visible for the naked eye. The EL spectrum from the Ge-implanted oxide annealed at 1000 °C correlates very well with the PL one and shows a linear dependence on the injected current. The neutral oxygen vacancy is assumed to be responsible for the observed luminescence. In the case of Ge the microstructure after high temperature annealing is studied.
Databáze:	OpenAIRE
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